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2.4 GHz High-Power, High-Gain Power Amplifier
A Microchip Technology Company
SST12LP15
Not Recommended for New Designs
Product Description
The SST12LP15 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs
HBT technology.
The SST12LP15 can be easily configured for high-power, high-efficiency applications with superb
power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 35
dB gain with 26% power-added efficiency @ P OUT = 24 dBm for 802.11g and 29% power-added effi-
ciency @ P OUT = 25 dBm for 802.11b.
The SST12LP15 has excellent linearity, typically ~4% added EVM at 23.5 dBm output power which is
essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 24+ dBm.
SST12LP15 also has wide-range (>25 dB), temperature-stable (~1 dB over 80°C), single-ended/differ-
ential power detectors which lower users’ cost on power control.
The power amplifier IC also features easy board-level usage along with high-speed power-up/down
control. Ultra-low reference current (total I REF <2 mA) makes the SST12LP15 controllable by an on/off
switching signal directly from the baseband chip. These features coupled with low operating current
make the SST12LP15 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN
transmitter applications.
The SST12LP15 is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1
for pin descriptions.
?2011 Silicon Storage Technology, Inc.
2
DS75030A
10/11
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